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Application Areas
Application Areas
Detection of silicon carbide dislocations and micro tube defects
Wafer chamfer parameter measurement
Wafer edge contamination defect detection
Wafer edge chipping defect detection
Wafer edge crack defect detection
Suitable for measuring the resistivity (carrier concentration) of silicon-based substrates and homogeneous epitaxial wafers
Suitable for measuring the resistivity (carrier concentration) of silicon carbide substrates and homogeneous epitaxial wafers
Detection of dislocations and microtubule defects in silicon carbide
SOI chip top layer silicon thickness measurement (4&6&8 inches)
Measurement of photoresist thickness and thick film thickness after CMP polishing
Measurement of photoresist thickness and thick film thickness after CMP polishing
Measurement of photoresist thickness and thick film thickness after CMP polishing
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