Realized full area scanning and detection of the entire substrate;
Using high-resolution real-time focusing high-speed scanning imaging
echnology and deep learning algorithm (AI);
Effectively improving the accuracy and speed of defect detection;
The SICD series equipment integrates the detection of dislocation
defects in corrosion films and the detection of high-resolution
microtubule defects in substrates on the same device;
This allows customers to use equipment more effectively on the
production line;
It can interface with the MES system of silicon carbide substrate
factories to achieve factory automation production.
advantage
Super high frequency optical microscopic imaging system is adopted,
combined with real-time high-precision focus compensation motion
control system；
Realize high-speed and high-resolution detection of WAFER defects,
significantly reducing detection time;
By using high-resolution image processing technology, high-precision
defect localization can be achieved;
features
Adopting high-speed optical microscopy imaging technology,
high-speed detection can be carried out;
The detection algorithm adopts deep learning and artificial
intelligence technology, with high adaptability
and the ability to accurately identify various defects;
Able to calibrate and count TED, TSD, BPD dislocations, and
detect and calibrate MP;
