Modular design of the optical unit, using the mature Unispec Fourier infrared technology;
Air-cooled infrared light source and moisture-resistant design reduce maintenance costs
(COO) and increase equipment uptime;
Fully compliant with SECS/GEM standards, the SECS interface supports local control operation,
and the host remote control operation through HSMS/SECS-1 protocol;
Client-server architecture with user-friendly interface allows for fast data collection and 2D or 3D
imaging;SEMI S2 certified;
Advantage
FTIR technology is used to realize non-contact measurement of epitaxial thickness;
Ability to determine the thickness of epitaxy on unpatterned or patterned wafers;
Measurements traceable to the in-house gold standard;
User-friendly interface, convenient and fast program settings;
Custom-designed global fitting algorithm for silicon carbide epitaxial film thickness measurement;
The thickness of the buffer layer of silicon carbide epitaxial wafers can be measured;
It can measure the thickness of silicon carbide epitaxial wafers, multiple buffer layers and multiple
epitaxial layers;
Features
FROC independent intellectual property rights, no need for additional reference wafers;
The optical system adopts ZnSe beam splitter and room temperature DTGS detector,
which does not require nitrogen purging to remove water, effectively reducing maintenance costs;
Able to provide corresponding customization for system software according to the special
requirements of customers;
