Implemented full area scanning and detection of the entire substrate;
Using high-resolution real-time focusing and high-speed scanning imaging
technology,The detection speed has been increased by tens of times, achieving
full detection of dislocation defects on the entire wafer (corrosion film);
The SICD series equipment integrates corrosion dislocation defect detection and
substrate high-resolution micro tube defect detection on the same device;
This enables customers to use equipment more effectively on the production line;
Can be integrated with MES systems in silicon carbide substrate factories to
achieve automated production.
advantage
Compatible with dislocation and micro tube defect detection on 6&8-inch
SiC substrates;
High resolution real-time focusing and high-speed line scanning imaging
technology;
Adopting deep learning algorithms (AI) to effectively improve the accuracy
of dislocation detection and achieve dislocation classification;
Can interface with MES systems of silicon carbide substrate manufacturers
to achieve factory automation production;
The crystal internal stress detection function provided by the equipment
can be used for seed crystal screening of silicon carbide.
features
Visual dynamic dislocation annotation display;
Real time line scan detection process display;
Real time display of detection results;
Customizable software user interface;
Dislocation size statistics function: to provide feedback
on the time and temperature of wafer corrosion for customers,
Assist customers in debugging suitable corrosion processes;
Stable detection repeatability (wafer repeated detection 10 times,
static repeatability>98%)；
