Recently, Shanghai Youruipu Semiconductor Equipment Co., Ltd. (referred to as "Yuruipu") successfully delivered a fully automatic equipment for detecting dislocations and microtubes on silicon carbide substrate wafers to overseas customers.

Dr. Tang Deming, General Manager of Yuruipu, introduced that SICD200 equipment has the following technical characteristics:

• Compatible with dislocation and micro tube defect detection on 6&8-inch SiC substrates; This device is a fully automatic device;

• High resolution real-time focusing and high-speed line scanning imaging technology, compared to traditional array scanning, increases detection speed by tens of times, achieving full detection of dislocation defects (corrosion film) on the entire wafer, significantly reducing the number of equipment purchases for customers;

• Adopting deep learning algorithms (AI) to effectively improve the accuracy of dislocation detection and achieve dislocation classification;

• Can interface with MES systems of silicon carbide substrate manufacturers to achieve factory automation production;

• The crystal internal stress detection function provided by the equipment can be used for seed crystal screening of silicon carbide.

  
  

  

  
  

                                                                                                              Figure 1: SICD200 equipment picture

  
  

Dr. Tang Deming stated that SICD has the following technological advantages in terms of overall software and defect detection algorithms:

• Visual dynamic dislocation annotation display;

• Real time line scan detection process display;

• Real time display of detection results;

• Customizable software user interface;

• Dislocation size statistics function: to provide feedback on the time and temperature of wafer corrosion for customers, and help them debug suitable corrosion processes;

• Stable detection repeatability (wafer repeated detection 10 times, static repeatability>98%).

  
  

  

                                                                                                         Figure 2: SICD200 device software interface

  
  

  

                                                                                                Figure 3: SICD200 device displays dislocation size

   

Previously, Youruipu has successively launched the "Domestic Semiconductor Specific FTIR (Fourier Transform Infrared Spectroscopy) Measurement Equipment" series (some models have now received orders from overseas customers):

• Applicable to silicon-based epitaxial layer thickness measurement equipment Eos200/Eos300

• Suitable for silicon-based element concentration (B/P/F) measurement equipment Eos200+/Eos300+;

• SIN, SIOC, and SION measurement functions: measurement of Si-H, Si-O, and N-H chemical bond content (CVD process monitoring);

• Through optimized hardware design (updated infrared spectrometer technology) and self-developed algorithms, the Eos200L device for measuring the thickness of silicon carbide epitaxial layer and epitaxial buffer layer is implemented;

• Through optimized hardware design (updated infrared spectrometer technology) and self-developed Global Fitting Algo ® Algorithm technology is used to implement Eos200L+for measuring the thickness of silicon carbide multilayer (≥ 3 layers) epitaxial films;

• Eos200T equipment for measuring C/O content in silicon materials

  
  

Youruipu SICV200 equipment

• The wafer resistivity measurement equipment has been realized, which fully benchmarks the testing performance of foreign suppliers and the localization goal of the equipment supply chain. At the same time, targeted innovative development has been carried out to address the industry pain points of metal residue and indentation after CV measurement of silicon carbide epitaxial wafers, successfully solving the industry pain points. Currently, orders have been received from multiple customers.

  
  

Youruipu Eos200DSR equipment

• Realized the measurement of the thickness of top layer silicon heavily doped on SOI wafers. At the same time, it can be used for measuring the thickness of silicon-based lithium niobate, the thickness of LTO on wafer back packaging, and the thickness of photoresist.

  
  

Youruipu SICE200 equipment

• We have achieved edge defect detection for compound semiconductors such as silicon carbide, as well as silicon substrates and epitaxial wafers, and have successfully delivered them to customers.

  
  

Youruipu was founded in 2021, led by a Ph.D. returnee who has been engaged in the semiconductor industry for a long time. It was jointly initiated and established with a domestic semiconductor front-end process measurement equipment technology team, committed to creating high-quality semiconductor front-end measurement equipment.